The measurement mode of existing optical voltage sensor is mostly based on optical power detection

so its measurement range and sensitivity are limited by the half-wave voltage of electro-optic crystal. The multi-segmented Pockels sensor can fix the problem of limitation of the half-wave voltage

but only for 1 000 kV voltage level. In addition

from the simulations the electric field distribution in the crystal is un-uniform and the optical path and crystal slices are deviated easily by vibration and thermal expansion and contraction in this configuration

which results in measurement error. Therefore

the multi-segmented structure is improved at 110 kV voltage level. The sensing system is simplified and the MgTiO3 ceramic is used to wrap around the crystal to improve the electric field distribution in the crystal

so that the error reduces from 0. 275% to 0. 01% or less. The improved structure is applicable to various voltage levels. Finally

the validity of the proposed method is verified by the experiment.