the high voltage power device insulated gate bipolar transistor(IGBT)has rapidly developed and found wide application in the HVDC power system. In this article
the development and improvement of IGBTs' performance are described first
with the significant stages of IGBTs; development and tendency in and outside China summarized
and the improvement of performance and packages for IGBT to be used in the application of flexible HVDC are analyzed in detail. In the end
typical topologies of HVDC devices based on IGBT are provided
including examples of parameters and characteristics of the devices in the power system.